ISSN 2456-0235

International Journal of Modern Science and Technology

INDEXED IN 

​​Volume 2, No. 10, October 2017 

​------------------------------------------------------------------------------------------------------
Research Articles
------------------------------------------------------------------------------------------------------

Low Power methodology for SRAM Memory using Dynamic Threshold MOS Transistor
K. Gavaskar, M. Sangavi, S. Ram Prasad, B. Sabari Manikandan
Pages 328-336​​.
Abstract   Full Paper (PDF)
---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------On Characterization of Normal Derivations 
B. O. Owino, N. B. Okelo, O. Ongati
Pages 337-340​​.
Abstract   Full Paper (PDF)
---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
​Maximal Numerical Range of Jordan Elementary Operator
B. O. Okello, N. B. Okelo, O. Ongati
Pages 341-344.
Abstract   Full Paper (PDF)

---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
Power Analysis of Sense Amplifier Designs for low voltage Memories
K. Gavaskar, G. Ravivarma
Pages 345-353​​.
Abstract   Full Paper (PDF)

​​​------------------------------------------------------------------------------------------------------