International Journal of Modern Science and Technology

INDEXED IN 

ISSN 2456-0235

​​Volume 2, No. 10, October 2017 

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Research Articles
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Low Power methodology for SRAM Memory using Dynamic Threshold MOS Transistor
K. Gavaskar, M. Sangavi, S. Ram Prasad, B. Sabari Manikandan
Pages 328-336​​.
Abstract   Full Paper (PDF)
---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------On Characterization of Normal Derivations 
B. O. Owino, N. B. Okelo, O. Ongati
Pages 337-340​​.
Abstract   Full Paper (PDF)
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​Maximal Numerical Range of Jordan Elementary Operator
B. O. Okello, N. B. Okelo, O. Ongati
Pages 341-344.
Abstract   Full Paper (PDF)

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Power Analysis of Sense Amplifier Designs for low voltage Memories
K. Gavaskar, G. Ravivarma
Pages 345-353​​.
Abstract   Full Paper (PDF)

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